3-D radio-frequency transformers based on a self-rolled-up membrane platform
The monolithic nature and versatility of this platform allows us tocreate high-performance transformers while maintaining an ultra-compact devicefootprint and by using only planar processing. We also show that theperformance of the three-dimensional RF transformers improves with scaling,which is in contrast to conventional planar designs. (This publicationoriginated from Prof. Xiuling Li’s group at UIUC with Prof. Wen Huang as the 1stauthor)
Precision structural engineering of self-rolled-up 3-D nanomembranes guided by transient quasi-static FEM modeling
Precision engineering of the shape and dimension determines theperformance of devices based on this platform for electronics, optics, andbiological applications. A new transient quasi-static finite element method(FEM) with moving boundary conditions is proposed as a general approach toaccurately predict diverse types of three-dimensional (3D) rolled-upgeometries. (This publication originated from Prof. Xiuling Li’s group at UIUCwith Prof. Wen Huang as the 1stauthor)
Graphene based FET fabrication and modeling
An improved double-gate monolayer short channel GFET with an agatelength of 150 nm was ﬁrst designed and fabricated by self-aligned gateprocessing, enabled by optimized organic, contamination free graphene transfer,for realizing high working frequency up to 40 GHz. A compact, precisecircuit-level model, including the linear and nonlinear operation of GFETs, isthen proposed with model parameters extracted based on the test data from thefabricated GFET.
Redefinable 3-D radio-frequency electronic devices
3-D structures capable of reversible transformations are useful for thedesign of redefinable RF devices. The approach relies on elastomer platformsdeformed in different time sequences to elastically alter, with engineeringcontrol, the 3D geometries of supportedmesostructuresvia controlled processes of non-linear mechanical buckling. The devicein this picture is the demonstration of using reversible buckling of Cumembrane to obtain RF inductor or RF low pass filter in another status.(Contributio
3-D radio-frequency Cu inductors based on a self-rolled-up membrane platform
On-chip copper (Cu) based S-RuMinductors are demonstrated for the first time. Compared to the gold(Au) based S-RuMinductor, device structures and fabrication processes are re-designed torealize CMOS compatibility by switching conduction metal to Cu and overcomingrelated processing challenges. (This publication originated from Prof. XiulingLi’s group at UIUC with Prof. Wen Huang as the 1stauthor)
- [2021-12-17]A cross-campus team including Prof. Wen Huang as the leading scientist has received National Key Research and Development Program of China (18.76M RMB) to further develop SRuM Platform!
- [2021-11-11]Our physical modeling work on SRuM Capacitors was accepted to publish on IEEE Transactions on Components, Packaging and Manufacturing Technology!
- [2021-07-03]Master student Siqi Wang was awarded the Excellent Poster Award on the 7th International Symposium of Flexible & Stretchable Electronics!
- [2020-08-07]Our co-authored paper with Prof. Xiuling Li's group at UIUC, "Monolithic Heterogeneous Integration of 3D Microwave L-C Elements by Self-Rolled-up Membrane Nanotechnology", is now published in Advanced Functional Materials！
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